FHP120N08D N-channel enhancement mode field effect transistor, using TO-220 packaging technology, is often used to replace faulty components.

Product parameter:

Type Designator: FHP120N08D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation: 230W

Maximum Drain-Source Voltage: 80V

Maximum Gate-Source Voltage: 25V

Maximum Gate-Threshold Voltage: 4V

Maximum Drain Current: 120A

Maximum Junction Temperature: 175°C

Total Gate Charge: 60nC

Rise Time: 4 nS

Drain-Source Capacitance: 500pF

Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO-220