Category | Transistors / MOSFET | |
Package | TO-92_Forming1 | |
Manufacturer | Hangzhou Silan Microelectronics | |
Drain to Source Voltage (Vdss) | 600V | |
Power Dissipation (Max) | 9W (Tc) | |
Rds On (Max) @ Id, Vgs | 11 Ω @ 0.5A, 10V | |
Current - Continuous Drain (Id) @ 25°C | 1A (Tc) | |
FET Type | N-Channel | |
Vgs(th) (Max) @ Id | 4V @ 250uA | |
Packaging | Tape & Reel (TR) |