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產品介紹
• Low VCE (ON) Trench IGBT Technology• Low Switching Losses• Maximum Junction temperature 175 °C• 5 μS short circuit SOA• Square RBSOA• 100% of the parts tested for ILM• Positive VCE (ON) Temperature co-efficient• Ultra-low VF Hyperfast Diode• Tight parameter distribution• Lead Free Package
