Fifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achievethe lowest possible on-resistance per silicon area.This benefit, combined with the fast switching speedand ruggedized device design that HEXFET PowerMOSFETs are well known for, provides the designerwith an extremely efficient device for use in a widevariety of applications.The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 watts. The low thermalresistance and low package cost of the TO-220contribute to its wide acceptance throughout theindustry.