This Advanced Planar Stripe HEXFET ® Power MOSFET utilizesthe latest processing techniques to achieve extremely low onresistanceper silicon area. Additional features of this HEXFETpower MOSFET are a 175°C junction operating temperature, lowRθJC, fast switching speed and improved repetitive avalancherating. This combination makes the design an extremely efficientand reliable choice for use in a wide variety of applications.