 Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Positive temperature coefficient in VCE(sat) very tight parameter distribution high ruggedness, temperature stable behaviour very high switching speed Low EMI Very soft, fast recovery anti-parallel Emitter Controlled HE diode Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models