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產品介紹
Specifications
| Category | Transistors / MOSFET | |
| Package | TO-92_Forming1 | |
| Manufacturer | Hangzhou Silan Microelectronics | |
| Drain to Source Voltage (Vdss) | 600V | |
| Power Dissipation (Max) | 9W (Tc) | |
| Rds On (Max) @ Id, Vgs | 11 Ω @ 0.5A, 10V | |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tc) | |
| FET Type | N-Channel | |
| Vgs(th) (Max) @ Id | 4V @ 250uA | |
| Packaging | Tape & Reel (TR) |
